"Joblot" . "Croissance"@fr . "Silicon"@en . "Hydrogen plasma"@en . "Differential Hall effect"@en . "Integration"@en . "Dislocations"@fr . "9a1e90eb321252814b99335cd9a65560" . "Radio-frequency"@en . "Contraintes"@fr . "Sub-nanometre resolution"@en . "Carrier mobility"@en . "Misorientation"@en . "Dopant activation"@en . "Defectivity"@en . "Implanted substrate"@en . . "D\u00E9sorientation"@fr . "Sylvain Joblot" . "Hight mobility"@en . "Silicium"@fr . "GaN"@en . "Surface"@fr . "Stripping"@en . "Domaines"@fr . "Blister"@en . "III-V"@en . "Contact resistance"@en . "Epitaxial growth"@en . "Fully depleted silicon on insulator FDSOI"@en . "Radio- fr\u00E9quence"@fr . "Transport"@fr . "Sylvain" . "Nitride"@en . "High dose implant stripping"@en . . "Strain engeneering"@en . . "Laser annealing"@en . "III-N"@fr . "Transistor"@fr . "\u00C9pitaxie"@fr . .